Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-30
2009-12-08
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S328000, C257S329000, C257S365000, C257SE39020
Reexamination Certificate
active
07629643
ABSTRACT:
Independent n-tips for multi-gate transistors are generally described. In one example, an apparatus includes a semiconductor fin, one or more multi-gate pull down (PD) devices coupled with the semiconductor fin, the one or more PD devices having an n-tip dopant concentration in the semiconductor fin material adjacent to the one or more PD devices, and one or more multi-gate pass gate (PG) devices coupled with the semiconductor fin, the one or more PG devices having an n-tip dopant concentration in the semiconductor fin material adjacent to the one or more PG devices, wherein the n-tip dopant concentration for the PG device is lower than the n-tip dopant concentration for the PD device.
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Datta Suman
Doyle Brian S.
Kavalieros Jack T.
Pillarisetty Ravi
Cool Patent P.C.
Curtin Joseph P.
Intel Corporation
Tran Tan N
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