Implanting carbon to form P-type source drain extensions

Details Implanting carbon to form P-type source drain extensions Implanting carbon to form P-type source drain extensions

2007-06-26

2007-06-26

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29278

Reexamination Certificate

active

11325864

ABSTRACT:
The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasing current drive in some embodiments.

REFERENCES:
patent: 6303450 (2001-10-01), Park et al.
patent: 6830980 (2004-12-01), Mansoori et al.
patent: 2003/0207542 (2003-11-01), Chidambaram et al.
patent: 2005/0151172 (2005-07-01), Takemura et al.

Affiliated with

Also associated with

Rating

Implanting carbon to form P-type source drain extensions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Implanting carbon to form P-type source drain extensions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Implanting carbon to form P-type source drain extensions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3851818