Increase in deep trench capacitance by a central ground...

Details Increase in deep trench capacitance by a central ground... Increase in deep trench capacitance by a central ground...

2005-08-16

2005-08-16

Mai, Anh Duy (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06930345

ABSTRACT:
A semiconductor device includes a trench formed in a substrate, and a diffusion region surrounding the trench to form a buried plate. A first conductive material is formed in the trench and connects to the buried plate through a bottom of the trench to form a first electrode. A second conductive material is disposed in the trench to form a second electrode. A node dielectric layer is formed between the first electrode and the second electrode.

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T. Hamamoto et al., Trench-Trench Leakage Current Characteristics in the Stacked Trench Capacitor (STT) Cell. IEEE 1991, pp. 419-422.

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