Molecular quantum memory
MRAM and data writing method therefor
MRAM architecture with a flux closed data storage layer
MRAM array with segmented word and bit lines
MRAM CAM
MRAM cell having frustrated magnetic reservoirs
MRAM cell requiring low switching field
MRAM data line configuration and method of operation
MRAM device including offset conductors
MRAM device including write circuit for supplying word and bit l
MRAM device using magnetic field bias to improve reproducibility
MRAM device using magnetic field bias to suppress inadvertent sw
MRAM having current peak suppressing circuit
MRAM having semiconductor device integrated therein
MRAM memory array having merged word lines
MRAM memory cell having a weak intrinsic anisotropic storage...
MRAM read bit with askew fixed layer
MRAM with pinned ends
MRAM with switchable ferromagnetic offset layer
MRAM with vertical storage element in two layer-arrangement...