Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2007-10-09
2007-10-09
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000
Reexamination Certificate
active
11634988
ABSTRACT:
An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.
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Ruehrig Manfred
Wecker Joachim
Edell Shapiro & Finnan LLC
Elms Richard T.
Infineon - Technologies AG
Sofocleous Alexander
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