MRAM cell requiring low switching field

Details MRAM cell requiring low switching field MRAM cell requiring low switching field

1997-05-23

1999-06-29

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365171, G11C 1115

Patent

active

059177497

ABSTRACT:
A low switching field multi-state, multi-layer magnetic memory cell including two layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material so as to form a portion of a multi-layer magnetic memory cell. The two layers of magnetic material being formed so that the width is less than the length and less than a width of magnetic domain walls within the two layers of magnetic material, setting a shape anisotropy easy axis along the length thereof. At least one of the two layers of magnetic material having a magnetic anisotropy generally parallel to the width of the layers of magnetic material.

REFERENCES:
patent: 3573760 (1971-04-01), Chang et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5766743 (1998-06-01), Fujikata et al.

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