MRAM with switchable ferromagnetic offset layer

Details MRAM with switchable ferromagnetic offset layer MRAM with switchable ferromagnetic offset layer

2006-08-08

2006-08-08

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

07088611

ABSTRACT:
A magnetoresistive memory cell includes a magnetic tunnel junction including first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers being antiferromagnetically coupled. The magnetoresistive memory cell further includes a switchable ferromagnetic offset field layer being provided with a free magnetic moment vector that is freely switchable between the same and opposite directions with respect to the fixed magnetic moment vector of the first magnetic region. A method of switching a magnetoresistive memory cell includes adiabatic rotational switching, where the memory cell is brought in an active state exhibiting reduced switching fields before its switching and is brought in a passive state exhibiting enlarged switching fields after its switching.

REFERENCES:
patent: 6072718 (2000-06-01), Abraham et al.
patent: 6531723 (2003-03-01), Engel et al.
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6865109 (2005-03-01), Covington
patent: 6958927 (2005-10-01), Nguyen et al.

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