MRAM device using magnetic field bias to suppress inadvertent sw

Static information storage and retrieval – Systems using particular element – Magnetic thin film

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365173, 365 55, G11C 1114

Patent

active

060976268

ABSTRACT:
In a Magnetic Random Access Memory device, a magnetic field bias is applied to half-selected memory cells during a write operation. The magnetic field bias suppresses the inadvertent switching of the half-selected memory cells.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5654566 (1997-08-01), Johnson
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5793697 (1998-08-01), Scheyerlein

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