MRAM device including write circuit for supplying word and bit l

Static information storage and retrieval – Systems using particular element – Magnetic thin film

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365173, G11C 1114

Patent

active

061117838

ABSTRACT:
Data is written to a memory cell of a Magnetic Random Access Memory ("MRAM") device by supplying currents having substantially unequal magnitudes to word and bit lines crossing that memory cell. The substantially higher magnitude current may be supplied to the word lines.

REFERENCES:
patent: 5587943 (1996-12-01), Torok et al.
patent: 5652445 (1997-07-01), Johnson

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