MRAM array with segmented word and bit lines

Details MRAM array with segmented word and bit lines MRAM array with segmented word and bit lines

2005-09-06

2005-09-06

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000

Reexamination Certificate

active

06940749

ABSTRACT:
A method and system for providing and using a magnetic random access memory (MRAM) array are disclosed. The method and system include providing magnetic storage cells, global word lines and global word line segments, of global bit lines and bit line segments, and selection devices. Each word line segment is coupled with at least one global word line such that the word line segments are selectable. Each word line segment is also coupled to a portion of the magnetic storage cells. Each bit line segment is coupled with at least one global bit line such the bit line segments are selectable. Each bit line segment resides in proximity to and is used to write to a portion of the magnetic storage cells. The bit line segments and the word line segments are coupled with and selectable using the plurality of selection devices.

REFERENCES:
patent: 5659499 (1997-08-01), Chen et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6153443 (2000-11-01), Durlam et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6678187 (2004-01-01), Sugibayashi et al.
patent: 2002/0034117 (2002-03-01), Okazawa
patent: 2002/0080643 (2002-06-01), Ito
patent: 2002/0127743 (2002-09-01), Nickel et al.
patent: 2002/0176272 (2002-11-01), DeBrosse et al.
patent: 2004/0174728 (2004-09-01), Takano et al.

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