MRAM architecture with a flux closed data storage layer

Details MRAM architecture with a flux closed data storage layer MRAM architecture with a flux closed data storage layer

2005-06-21

2005-06-21

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S158000, C365S225500, C365S055000, C365S066000, C365S087000

Reexamination Certificate

active

06909633

ABSTRACT:
A method and system for providing and using a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and providing at least one magnetic write line coupled with the plurality of magnetic memory cells. Each of the magnetic memory cells includes a magnetic element having a data storage layer. The data storage layer stores data magnetically. The magnetic write line(s) are magnetostatically coupled with at least the data storage layer of the magnetic element of the corresponding magnetic memory cells. Consequently, flux closure is substantially achieved for the data storage layer of each of the plurality of magnetic memory cells.

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