Static information storage and retrieval – Systems using particular element – Magnetic thin film
Patent
1999-08-06
2000-12-19
Hoang, Huan
Static information storage and retrieval
Systems using particular element
Magnetic thin film
365171, 365158, G11C 1115
Patent
active
061634778
ABSTRACT:
A magnetic field bias is applied to memory cells of an MRAM device during a write operation. The magnetic field bias, which may be applied by a permanent magnet or an electromagnet, can improve reproducibility of memory cell switching.
REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5748524 (1998-05-01), Chen et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5838608 (1998-11-01), Zhu et al.
Hewlett -Packard Company
Hoang Huan
LandOfFree
MRAM device using magnetic field bias to improve reproducibility does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MRAM device using magnetic field bias to improve reproducibility, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MRAM device using magnetic field bias to improve reproducibility will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-275871