MRAM device using magnetic field bias to improve reproducibility

Static information storage and retrieval – Systems using particular element – Magnetic thin film

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365171, 365158, G11C 1115

Patent

active

061634778

ABSTRACT:
A magnetic field bias is applied to memory cells of an MRAM device during a write operation. The magnetic field bias, which may be applied by a permanent magnet or an electromagnet, can improve reproducibility of memory cell switching.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5748524 (1998-05-01), Chen et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5838608 (1998-11-01), Zhu et al.

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