MRAM and data writing method therefor

Details MRAM and data writing method therefor MRAM and data writing method therefor

2006-03-07

2006-03-07

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000

Reexamination Certificate

active

07009876

ABSTRACT:
In an MRAM having main and sub-structures, selecting transistors are arranged so as to meet the arrangement order of main word lines, sub-word lines and the selecting transistors. The selecting transistor is driven to cause a snap back phenomenon to occur. As a result, data can be written to a memory cell using a substrate current, not a channel current. Moreover, a data may be written into a selected memory cell by discharge the charge which is charged in the main and sub word lines corresponding to the memory cell.

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Partial European Search Report dated Jul. 2, 2004.

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