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Write margin of SRAM cells improved by controlling power...

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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Write VCCMIN improvement scheme

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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Write-assist SRAM cell

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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Write-assisted memory cell and method of operating same

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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Write-assisted SRAM bit cell

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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Writing speed of SCR-based memory cells

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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Zero power high speed programmable circuit device architecture

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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Zero-write-cycle memory cell apparatus

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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