Writing speed of SCR-based memory cells

Details Writing speed of SCR-based memory cells Writing speed of SCR-based memory cells

1986-06-02

1988-09-06

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365179, 365190, 365204, G11C 1100, G11C 1134, G11C 700

Patent

active

047697857

ABSTRACT:
Load resistors are connected in series between the PNP portions of the SCRs and the upper word-line. The load presented to the NPN portions of the SCRs is thus a composite formed of a PNP transistor in series with a resistor. The resistor causes a downward shift of voltage due to IR drop on the ON side of the cell and provides a dramatic improvement in writing speed. During a write operation, the IR drop across the resistor on the ON side of the cell collapses as current declines, and the consequent rise in voltage is coupled to the low base line, significantly shortening the time required to raise its voltage sufficiently to securely write the cell.

REFERENCES:
patent: 4570240 (1986-02-01), Seelbach et al.
patent: 4580244 (1986-04-01), Birrittella
patent: 4601014 (1986-07-01), Kitano et al.
patent: 4618944 (1986-10-01), Okajima
patent: 4625299 (1986-11-01), Isogai et al.
patent: 4646268 (1987-02-01), Kuno
patent: 4692900 (1987-09-01), Oami et al.

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