Zero-write-cycle memory cell apparatus

Static information storage and retrieval – Systems using particular element – Flip-flop

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365154, 36518901, 36518911, G11C 1100

Patent

active

058089330

ABSTRACT:
A zero-write-cycle memory cell apparatus for simultaneously reading and writing data to and from a memory cell via isolated read and write wordlines wherein read cycles operate without dedicated write cycles. The zero-write-cycle memory cell apparatus includes a memory cell or storage circuit for the storage of binary data and a write circuit for writing binary data to the memory cell or storage circuit wherein the write circuit includes a write wordline. The presence of a binary data signal at the write wordline optimizes write performance independently of a read path from the memory cell. The zero-write-cycle memory cell apparatus further includes a read circuit for reading binary data from the memory cell or storage circuit. The read circuit includes a read wordline. The presence of a binary data signal at the read wordline optimizes read performance independently of a write path into said memory cell. The zero-write-cycle memory cell apparatus additionally includes a write-enable device, coupled to the memory cell or storage circuit, for providing a write-enable signal to the memory cell. The write-enable circuit can be shared by other memory cells to form a memory array. The zero-write-cycle memory cell apparatus is designed such that dedicated write cycles do not occur, only dedicated read cycles.

REFERENCES:
patent: 4580245 (1986-04-01), Ziegler et al.
patent: 4845676 (1989-07-01), Lohlein et al.
patent: 4928266 (1990-05-01), Abbott et al.
patent: 4995001 (1991-02-01), Dawson et al.
patent: 5040146 (1991-08-01), Mattausch et al.
patent: 5265047 (1993-11-01), Leung et al.
patent: 5289432 (1994-02-01), Dhong et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Zero-write-cycle memory cell apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Zero-write-cycle memory cell apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Zero-write-cycle memory cell apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-95522

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.