Use of recovery transistors during write operations to...
User configurable commands for flash memory
User configurable commands for flash memory
User configurable commands for flash memory
User configurable commands for flash memory
User identification for multi-purpose flash memory
User selectable cell programming
Using a low drain bias during erase verify to ensure...
Using a negative gate erase to increase the cycling...
Using a negative gate erase voltage applied in steps of...
Using floating gate devices as select gate devices for NAND flas
Using hot carrier injection to control over-programming in a...
Using MLC flash as SLC by writing dummy data
Using multiple status bits per cell for handling power...
Using negative gate erase voltage to simultaneously erase...
V.sub.pp only scalable EEPROM memory cell having transistors wit
Variable capacity semiconductor memory device
Variable current sinking for coarse/fine programming of...
Variable current sinking for coarse/fine programming of...
Variable gate bias for a reference transistor in a...