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Method and apparatus for growing diamond films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method and apparatus for growing high purity single crystal sili

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
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Method and apparatus for growing high quality single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method and apparatus for growing multiple crystalline...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method and apparatus for growing multiple crystalline...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method and apparatus for growing oriented whisker arrays

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For forming a platelet shape or a small diameter – elongate,...
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Method and apparatus for growing semiconductor crystals with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
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Method and apparatus for growing shaped crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method and apparatus for growing silicon carbide crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
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Method and apparatus for growing single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method and apparatus for increasing silicon ingot growth rate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Method and apparatus for irradiation of a pulse laser beam

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
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Method and apparatus for loading raw material into a quartz cruc

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Method and apparatus for low temperature, low pressure chemical

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method and apparatus for making a crystal pre-melt

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate

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Method and apparatus for manufacturing a silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method and apparatus for manufacturing a silicon single...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Method and apparatus for manufacturing group III nitride...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
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Method and apparatus for manufacturing semi-insulation GaAs mono

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method and apparatus for manufacturing single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
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