Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2005-05-24
2005-05-24
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S082000, C117S083000, C117S223000
Reexamination Certificate
active
06896729
ABSTRACT:
Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into and out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.
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Liu Wei Guo
Liu Xiao Gordon
AXT, Inc.
Dickinson Wright PLLC
Edwards, Esq. Jean C.
Kunemund Robert
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