Method and apparatus for increasing silicon ingot growth rate

Details Method and apparatus for increasing silicon ingot growth rate Method and apparatus for increasing silicon ingot growth rate

1994-08-17

1995-08-22

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 13, 117200, C30B 3500

Patent

active

054430348

ABSTRACT:
A CZ crystal growing furnace which has a radiative heat shield that can be raised and lowered above a crucible. The heat shield assembly includes an upper heat shield that is mounted to a furnace cover directly above the crucible. Coupled to the upper shield is a lower heat shield which can move between a first raised position and a second lower position. Attached to the seed holder of the furnace is a bar which maintains the lower heat shield in the first raised position, so that the crucible can be filled with raw silicon. After the silicon is melted, the heat shield is lowered to the second position and the bar is lifted and removed from the furnace. The lower heat shield has an outer ring which cooperates with an inner ring of the upper heat shield to suspend the lower shield in the second position. The heat shield also has a tapered wall which defines an opening that allows an ingot to be pulled from the molten silicon.

REFERENCES:
patent: 4330361 (1982-05-01), Kuhn-Kuhnenfeld et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 4497777 (1985-02-01), Kojima
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5316742 (1994-05-01), Tomioka et al.

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