Method and apparatus for manufacturing single crystal

Details Method and apparatus for manufacturing single crystal Method and apparatus for manufacturing single crystal

2006-05-16

2006-05-16

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

C117S084000, C117S109000, C117S952000

Reexamination Certificate

active

07045009

ABSTRACT:
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.

REFERENCES:
patent: 6113692 (2000-09-01), Jaussaud et al.
patent: 6451112 (2002-09-01), Hara et al.
patent: A-01-305898 (1989-11-01), None
patent: A-2002-060297 (2002-02-01), None

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