Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1992-07-02
1994-10-25
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
423446, 117103, 117929, C30B 2904
Patent
active
053585968
ABSTRACT:
A supersonic, direct-current arcjet is designed for expansion into low pressure, the arcjet operates as mixtures of hydrogen and argon to convert molecular hydrogen to atomic hydrogen and direct the atomic hydrogen to a substrate surface. A hydrocarbon (methane or acetylene) is introduced in the arcjet plume where it is converted to hydrocarbon precursors and is directed to the substrate surface where it combines with the atomic hydrogen to produce a diamond film.
REFERENCES:
patent: 4961958 (1990-10-01), Desphandey et al.
patent: 5104634 (1992-04-01), Calcote
patent: 5110405 (1992-05-01), Sawabe et al.
patent: 5204145 (1993-04-01), Gasworth
Cappelli Mark A.
Loh Michael H.
Breneman R. Bruce
Garrett Felisa
The Board of Trustees of the Leland Stanford Junior University
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