Method and apparatus for growing shaped crystals

Details Method and apparatus for growing shaped crystals Method and apparatus for growing shaped crystals

1992-02-28

1995-03-07

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 25, 117210, C30B 1514

Patent

active

053948254

ABSTRACT:
A high temperature heat exchanger is used with the Czochralski crystal growing method to control the heat extraction from crystal silicon ingots as they are grown. The high temperature heat exchanger also acts as a shaping die so that silicon bars, or ingots, of various shapes, including square, circular, rectangular or ribbon, can be produced by shaping during the growth stage.

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