Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-07-02
1999-10-19
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 32, 117217, 117218, 117219, 117222, 117917, C30B 1522
Patent
active
059682647
ABSTRACT:
In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.
REFERENCES:
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patent: 5827366 (1998-10-01), Watanabe
Dupret, et al.: "Global Modelling of heat transfer in crystal growth furnaces"; Int J. Heat Mass Transfer, vol. 33, No. 9, 1990, pp. 1849-1871, XP000577560 Oxford, GB.
Dornberger, Erich and Winfried von Ammon, "The Dependence of Ring-Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon Crystals," J. Electrochem. Soc., vol. 143, No. 5, May 1996 .COPYRGT.The Electrochemical Society Inc. pp. 1648-1653.
Abe, T., H. Harada and J. Chikawa, "Swirl Defects in Float-Zoaned Silicon Crystals," Phisica 116B. (1983) 139-147 North Holland Publishing Company, pp. 139-147.
Iida Makoto
Iino Eiichi
Kimura Masanori
Muraoka Shozo
Yamanaka Hideki
Hiteshew Felisa
Shin-Etsu Handotai & Co., Ltd.
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