Method and apparatus for growing high quality single crystal

Details Method and apparatus for growing high quality single crystal Method and apparatus for growing high quality single crystal

2005-01-18

2005-01-18

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S011000, C117S013000, C117S018000, C117S031000, C117S200000, C117S208000, C117S213000, C117S217000

Reexamination Certificate

active

06843849

ABSTRACT:
In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.

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