Method and apparatus for growing high purity single crystal sili

Details Method and apparatus for growing high purity single crystal sili Method and apparatus for growing high purity single crystal sili

1997-12-11

1999-11-16

Powell, William

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 99, 117104, 117951, C30B 2300

Patent

active

059850248

ABSTRACT:
Method and apparatus for growing semiconductor grade silicon carbide boules (84). Pure silicon feedstock (36) is melted and vaporized. The vaporized silicon is reacted with a high purity carbon-containing gas (64), such as propane, and the gaseous species resulting from the reaction are deposited on a silicon carbide seed crystal (50), resulting in the growth of monocrystalline silicon carbide.

REFERENCES:
patent: Re34861 (1995-02-01), Davis et al.
patent: 5230768 (1993-07-01), Furukawa et al.
J. D. Parsons et al- Epitaxial Growth of Beta-SiC on TiC.sub.x by Reactive Evaporation- J. Electrochem. Soc. vol. 140 No. 6 Jun. 1993.
O. Kordina et al., "High Temperature Chemical Vapor Deposition of SiC", Applied Physics Letters, 69(10), Sep. 2, 1996 1456-58.
Brander, R.W., "Epitaxial Growth of Silicon Carbide", Journal of the Electrochemical Society, vol. III No. 7 (Jul. 1964): 881-883.

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