Method and apparatus for growing single crystal

Details Method and apparatus for growing single crystal Method and apparatus for growing single crystal

2005-05-31

2005-05-31

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S034000, C117S208000, C117S217000, C117S935000

Reexamination Certificate

active

06899758

ABSTRACT:
The present invention provides a method and apparatus for growing a single crystal by the Czochralski method, wherein a single crystal is grown with forced cooling of neighborhood of a crystal growth interface by disposing a cooling cylinder formed of copper or a metal having a heat conductivity larger than that of copper at least in the vicinity of the crystal growth interface so as to surround the single crystal under pulling and circulating a cooling medium in the cooling cylinder. Thus, there are provided a method and apparatus for growing a single crystal, which can exert cooling effect on a growing single crystal to the maximum extent so as to realize higher crystal growth rate, even when a silicon single crystal having a diameter of 300 mm or more is grown.

REFERENCES:
patent: 5567399 (1996-10-01), Von Ammon et al.
patent: 6036776 (2000-03-01), Kotooka et al.
patent: 6117402 (2000-09-01), Kotooka et al.
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patent: 63-285187 (1988-11-01), None
patent: 02-097481 (1990-04-01), None
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patent: 08-239291 (1996-09-01), None
F. Dupret et al., “Global Modelling of Heat Transfer in Crystal Growth Furnaces”, Int. J. Heat Mass Transfer, vol. 33, No. 9, pp. 1849-1871, 1990.

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