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Sublimation growth of single crystal SiC

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
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Substituted donor atoms in silicon crystal for quantum computer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Substrate for epitaxy and method of preparing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
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Substrate having a zinc oxide nanowire array normal to its...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
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Substrate including wide low-defect region for use in...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Substrate processing apparatus and substrate processing method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
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Substrate processing method and apparatus and SOI substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Substrate with a compound semiconductor surface layer and method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Substrate, semiconductor device, element-mounted device and prep

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Substrates and methods for gas phase deposition of semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
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Superabrasive particle synthesis with controlled placement...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
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Superabrasive particle synthesis with controlled placement...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
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Superconductor incorporating therein superconductivity...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Supplemental heating unit for crystal growth furnace

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
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Supporting apparatus for supporting a growing single crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Surface acoustic wave device, substrate therefor, and method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Surface modification process of quartz glass crucible

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Surface modified quartz glass crucible, and its modification...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
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Surface preparation method and semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Surface treating method of single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
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