Surface treating method of single crystal

Details Surface treating method of single crystal Surface treating method of single crystal

1995-03-13

1999-01-05

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 1, C30B 3104

Patent

active

058556680

ABSTRACT:
A surface treating method of single crystals by which single crystals for substrates having finished surfaces showing pit-free and atomic scale step structures are obtained by treating the {100}-plane surfaces of single-crystal SrTiO.sub.3 substrates by dissolving two-dimensional-lattice atomic layers forming the surfaces one layer by one layer by using a fluorine-based acidic solution (maintained at >35.degree. C. in temperature and <4 in pH) as a solution A and water as a solution B by alternately immersing the substrates in the substrates in the solution A and B.

REFERENCES:
patent: 4874741 (1989-10-01), Shaw et al.
patent: 5069725 (1991-12-01), Fischer et al.
patent: 5356474 (1994-10-01), Savkar
patent: 5442585 (1995-08-01), Eguchi et al.
Kawasaki et al, "Atomic Control of the SrTiO.sub.3 Crystal Surface," Science vol. 266 pp. 1510-1542, Dec. 2, 1994.
Yoshimoto et al, "Molecular Layer Epitaxy of Perovskite Based Oxides By Laser MBE", Mat. Res. Soc. Symp. vol. 341 pp. 133-138, Jan. 1994.
Norton et al, "Surface Preparation for the heteroepitactic Growth of Ceramic Thin Films", Appl. Phys. Letters vol. 56(22) pp. 2246-2248, May 28, 1990.

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