LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of delivering gas into reaction chamber and shower...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Method of deposing by molecular beam epitaxy

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

Method of depositing a ferromagnetic film on a waveguide and a m

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of depositing a gallium nitride-based III-V group compoun

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Method of depositing a thin film using an optical pyrometer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of depositing an electrically conductive oxide film...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

Method of depositing buffer layers on biaxially textured...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of depositing transition metal nitride thin films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of deposition by molecular beam epitaxy

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

Method of deposition of a single-crystal silicon region

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...

Method of determining crystallization

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

Method of determining nitrogen concentration within a wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Method of determining oxygen precipitation behavior in a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Method of digital epilaxy by externally controlled closed-loop f

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region

Method of drawing single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Method of effecting nitrogen doping in Czochralski grown silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

Method of eliminating dislocations and lowering lattice strain f

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

Method of epitaxial growth of semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of epitaxially growing compound crystal and doping method