Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent
1992-09-17
1994-11-15
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Including change in a growth-influencing parameter
356309, 356310, 356319, 356320, H01L 2120
Patent
active
053644921
ABSTRACT:
A new method for accurately and sequentially growing monolayers and creating new superlattice structures employing a MBE thermal source control technique employing a quasi-double beam atomic absorption background correction measurements with the beam blocked and with the beam unblocked and by calculating the concentration based on the: ##EQU1## and applying corrections for non-linear absorption curves because of comparable spectral bandwidth of the molecular beam.
REFERENCES:
patent: Re32022 (1985-11-01), Parker et al.
patent: 4159919 (1979-07-01), McFee et al.
patent: 4462685 (1984-07-01), Smith, Jr. et al.
patent: 4786616 (1988-11-01), Awal et al.
patent: 4855013 (1989-08-01), Ohta et al.
patent: 5089104 (1992-02-01), Kanda et al.
Klausmeier-Brown et al "Acurate measurement of Atomic Beam flux by Pseudo-double-beam atomic absorption spectroscopy for growth of thin-film oxide superconductors" in Appl. Phys. Letters 60 (1992), 657-659.
Kometani et al "Measurement of Ga and Al in a Molecular-Beam Epitaxy Chamber by Atomic Absorption Spectroscopy (AAS)" in J. Vac. Sci. Technol. 12(1975), 933-936.
Bozovic Ivan
Eckstein James N.
Klausmeier-Brown Martin E.
Virshap Gary F.
Breneman R. Bruce
Fisher Gerald M.
Paladugu Ramamohan Rao
Varian Associates Inc.
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