Method of deposing by molecular beam epitaxy

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

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356309, 356310, 356319, 356320, H01L 2120

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053644921

ABSTRACT:
A new method for accurately and sequentially growing monolayers and creating new superlattice structures employing a MBE thermal source control technique employing a quasi-double beam atomic absorption background correction measurements with the beam blocked and with the beam unblocked and by calculating the concentration based on the: ##EQU1## and applying corrections for non-linear absorption curves because of comparable spectral bandwidth of the molecular beam.

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Klausmeier-Brown et al "Acurate measurement of Atomic Beam flux by Pseudo-double-beam atomic absorption spectroscopy for growth of thin-film oxide superconductors" in Appl. Phys. Letters 60 (1992), 657-659.
Kometani et al "Measurement of Ga and Al in a Molecular-Beam Epitaxy Chamber by Atomic Absorption Spectroscopy (AAS)" in J. Vac. Sci. Technol. 12(1975), 933-936.

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