Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1993-07-26
1995-01-10
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
437105, 437107, 437126, 437133, C30B 2502
Patent
active
053797191
ABSTRACT:
A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.
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Chalmers Scott A.
Killeen Kevin P.
Lear Kevin L.
Breneman R. Bruce
Libman George H.
Paladugu Ramamohan Rao
Sandia National Laboratories
Stanley Timothy D.
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