Method of depositing a thin film using an optical pyrometer

Details Method of depositing a thin film using an optical pyrometer Method of depositing a thin film using an optical pyrometer

1996-05-16

1998-07-21

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117 85, 117 86, 117 89, 117 92, 118666, 118712, 427 10, 2503416, 374121, C23C 1454, G01J 508

Patent

active

057829748

ABSTRACT:
A temperature measurement system for use in a thin film deposition system is based on optical pyrometry on the backside of the deposition substrate. The backside of the deposition substrate is viewed through a channel formed in the susceptor of the deposition system. Radiation from the backside of the deposition substrate passes through an infrared window and to an infrared detector. The signal output by the infrared detector is coupled to electronics for calculating the temperature of the deposition substrate in accordance with blackbody radiation equations. A tube-like lightguide shields the infrared detector from background radiation produced by the heated susceptor.

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Notice of Allowability and Notice of Allowance and Issue Fee Due dated Feb. 6, 1996 with PTO-892 in application serial No. 08/190,421, filed Feb. 2, 1994.
JAPIO, abstract, Japan Patent No. 3-156327, Fujitsu Ltd.

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