Method of depositing transition metal nitride thin films

Details Method of depositing transition metal nitride thin films Method of depositing transition metal nitride thin films

2005-03-08

2005-03-08

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S088000, C117S089000, C117S102000

Reexamination Certificate

active

06863727

ABSTRACT:
This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulse of a source material, a reducing agent capable of reducing metal source material, and a nitrogen source material capable of reacting with the reduced metal source material are alternately and sequentially fed into a reaction space and contacted with the substrate. According to the invention as the reducing agent is used a boron compound which is capable of forming gaseous reaction byproducts when reacting with the metal source material.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 5342652 (1994-08-01), Foster et al.
patent: 5691235 (1997-11-01), Meikle et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5723384 (1998-03-01), Park et al.
patent: 5916365 (1999-06-01), Sherman
patent: 6576053 (2003-06-01), Kim et al.
patent: 6616982 (2003-09-01), Merrill et al.
patent: 6652924 (2003-11-01), Sherman
patent: 6727169 (2004-04-01), Raaijmakers et al.
patent: 0 899 779 (1999-03-01), None
patent: 8 264 530 (1996-10-01), None
Elers et al., “NbC15 as a precursor in atomic layer epitaxy,”Applied Surface Science,82/83:468-474 (1994).
Hiltunen et al., “Nitrides of titanium, niobium, tantalum and molybdenum grown as thin films by the atomic layer epitaxy method,”Thin Solid Films,166:149-154 (1988).
Ritala et al., “atomic layer epitaxy growth of TiN thin Films,”J. Electrochem. Soc.,142(8):2731-2737 (1995).
Jeon, H., “A Study on the Charactertics of TiN Thin Film Deposited by Atomic Layer Chemical Vapor Deposition Method,”AVS 46thInternational Symposium,Seattle, WA, abstract TF-MoP17 (1999).
Jeon, H., et al., “A Study on the Characteristics of TiN Thin Film Deposited by Atomic Layer Chemical Vapor Deposition Method,”J. Vac. Sci. Technol. A,18(4), 1595-1598 (2000).
Klaus, J.W., et al., “Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions,”Appl. Surf. Science162-163; 479-471 (2000).
Klaus, J.W., et al., “Atomic layer deposition of tungsten nitride films using sequential surface reactions,”Journal of the Electrochemical Soc.,147(3):1175-1181 (2000).
Klaus, J.W., et al., “Atomic layer deposition of tungsten using sequential surface chemistry with a sacrifical stripping reaction,”Thin Solid Films,360:145-153 (2000)n.
Klaus, J.W., et al., “Atomic layer deposition of tungsten and tungsten nitride using sequential surface reactions,”AVS 46thinternational Symposium,Seattle, WA, abstract TF-TuM6 (1999).

Affiliated with

Also associated with

Rating

Method of depositing transition metal nitride thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of depositing transition metal nitride thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing transition metal nitride thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3451820