Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base
Patent
1999-01-26
2000-12-26
Utech, Benjamin L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With pretreatment or preparation of a base
117913, 117935, C30B 2516, C30B 2906
Patent
active
061652652
ABSTRACT:
The present invention relates to a method of deposition of a silicon layer on a single-crystal silicon substrate 11 , so that the silicon layer is a single-crystal layer, but of different orientation than the substrate, including the steps of defining a window 13 on the substrate; creating inside the window interstitial defects 14 with an atomic proportion lower than one for one hundred; and performing a silicon deposition 15 in conditions generally corresponding to those of an epitaxial deposition, but at a temperature lower than 750.degree. C.
REFERENCES:
patent: 5010034 (1991-04-01), Manoliu
patent: 5554561 (1996-09-01), Plumton
Search Report for (French) Appl. FR 9,801,313, Oct. 1998.
Garverick, L.M. et al., "Silicon surface cleaning by low dose argon-ion bombardment for low temperature (750 C) epitaxial deposition. II. Epitaxial quality", Journal of Applied Physics, vol. 62, No. 8: 3398-3404., Oct. 1987.
Gris Yvon
Mourier Jocelyne
Troillard Germaine
Champagne Donald L.
Galanthay Theodore E.
Morris James H.
STMicroelectronics S.A.
Utech Benjamin L.
LandOfFree
Method of deposition of a single-crystal silicon region does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of deposition of a single-crystal silicon region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of deposition of a single-crystal silicon region will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-990457