Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-04-06
1995-07-18
Kunemond, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 89, 117 93, 117105, 117952, C30B 2514
Patent
active
054331692
ABSTRACT:
A method of depositing a gallium nitride-based III-V Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The gallium nitride-based III-V Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate, under atmospheric pressure or a higher pressure.
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Kunemond Robert
Nichia Chemical Industries Ltd.
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