Method of epitaxial growth of semiconductor

Details Method of epitaxial growth of semiconductor Method of epitaxial growth of semiconductor

1992-09-30

1994-12-20

Kunemund, Robert M.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117 9, 117 10, 117913, 117930, 437 82, 437108, C30B 106

Patent

active

053738039

ABSTRACT:
A method of epitaxially growing semiconductor crystal by which a single crystal region which is superior in quality can be selectively formed at a high throughput without employing the lithography technique. A shield mask is formed on an upper face of an amorphous semiconductor layer formed on substrate, and excimer laser light is irradiated upon the amorphous semiconductor layer using the shield mask to produce, in the amorphous semiconductor layer, a core from which crystal is to be grown. After the shield mask is removed, low temperature solid phase annealing processing for the amorphous semiconductor layer is performed to grow crystal from the core to form a single crystal region in the amorphous semiconductor layer. Alternatively, the silicon core is formed by irradiating an energy beam, which is capable of being converged into a thin beam and being used to directly draw a picture, at a predetermined position of the amorphous silicon film.

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patent: 4576851 (1986-03-01), Iwamatsu
patent: 4661167 (1987-04-01), Kusunoki et al.
patent: 4751193 (1988-06-01), Myrick

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