Method of epitaxially growing compound crystal and doping method

Details Method of epitaxially growing compound crystal and doping method Method of epitaxially growing compound crystal and doping method

1993-04-21

1994-08-16

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117953, 117954, 117955, C30B 2502

Patent

active

053383893

ABSTRACT:
In a method of epitaxially growing a compound crystal, a plurality of crystal component gasses of a compound and reaction gas chemically reacting with the crystal component gasses are individually directed, in the predetermined order, onto a substrate crystal heated under vacuum. The crystal compound gasses and the reaction gas may be overlapped with each other. In a doping method in the above-described epitaxial growth method, the crystal component gasses and the compound gas of dopant are directed onto the substrate crystal and, subsequently, reaction gas, which chemically reacts with the compound gasses, is directed onto the substrate crystal. Also in this case, the reaction gas may be in overlapped relation to the component gas of dopant.

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