Method of determining nitrogen concentration within a wafer

Details Method of determining nitrogen concentration within a wafer Method of determining nitrogen concentration within a wafer

2005-05-24

2005-05-24

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

C117S003000, C117S013000, C117S015000, C117S932000

Reexamination Certificate

active

06896727

ABSTRACT:
An improved method of determining the concentration of nitrogen within a wafer is provided. At least a portion of the nitrogen within the wafer is initially gettered to a gettering site. In order prevent the in-diffusion of nitrogen, a barrier layer is generally deposited upon the wafer prior to gettering the nitrogen within the wafer. The nitrogen is then measured at the gettering site. The concentration of nitrogen within the wafer is then determined based upon the measurement of nitrogen at the gettering site and the diffusion coefficient for nitrogen. In this regard, the diffusion coefficient of nitrogen permits the measurement of nitrogen at the gettering site to be translated into a measurement of the concentration of nitrogen throughout the entire wafer.

REFERENCES:
patent: 6059875 (2000-05-01), Kirkland et al.
patent: 6224668 (2001-05-01), Tamatsuka
Tobe et al, “Equilibrium constant of segragation-induced Fe gettered by heavy boron doping in Si”, Journal of Applied Physics vol. 84 no3. pp. 1279-1283 abstract only, Aug. 1998.*
Yang et al., “Nitrogen in Czochralski Silicon” IEEE 2001 6th conference on Solid-State and Integrated Circuit pp. 255-260 2001.

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