LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Method for the production of low defect density silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Method for the production of multi-crystalline semiconductor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method for the production of nanometer scale step height...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...

Method for the production of semiconductor quantum particles

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method for the sublimation growth of an SiC single crystal,...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

Method for treating photorefractive effect of an optical...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Method for tuning barrel reactor purge system

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method for two-dimensional epitaxial growth of III-V compound se

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Method for vanishing defects in single crystal silicon and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method for vapor phase growth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Method for vapor phase growth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method for vapor phase synthesis of diamond

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method for vapor-phase growth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method for vapor-phase growth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Method for vaporizing and supplying

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method for vaporizing and supplying organometal compounds

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of (111) group II-VI epitaxial layer grown on (111) silic

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of altering crystal structure of group 13 element...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of altering the properties of a thin film and...