Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-10-23
1998-05-26
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 84, 117 93, 117103, 4272481, 427255, C30B 2303
Patent
active
057558787
ABSTRACT:
In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.
REFERENCES:
patent: 4745088 (1988-05-01), Inoue et al.
patent: 5221556 (1993-06-01), Hawkins et al.
patent: 5304247 (1994-04-01), Kondo et al.
patent: 5392730 (1995-02-01), Kondo et al.
"Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs"; Takikawa, et al; Journal of Crystal Growth, 107 (1991) Jan. Nos. 1/4, Amsterdam N.L.
Habuka Hitoshi
Katayama Masatake
Mayuzumi Masanori
Tate Naoto
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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