Method for vanishing defects in single crystal silicon and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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C117S019000, C117S020000

Reexamination Certificate

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10500268

ABSTRACT:
A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high temperature heat treatment at a temperature of at least 1300° C., or comprises subjecting single crystal silicon which is prepared by the CZ method and is not subjected to an oxidation treatment (a bare wafer) to an ultra high temperature heat treatment in an oxygen atmosphere and at a temperature of higher than 1200° C. and lower than 1310° C. The method allows the elimination of void defects present in single crystal silicon with reliability.

REFERENCES:
patent: 0 889 510 (1999-01-01), None
patent: 1 035 235 (2000-09-01), None
patent: 07201874 (1995-08-01), None
patent: 09194294 (1997-07-01), None
Adachi, et al.; “Reduction of Grown-In Defects by High Temperature Annealing,”Journal of The Electrochemical Society, vol. 147 (1), pp. 350-353, 2000.
Umeno et al.; “Dependence of Grown-In Defect Behavior on Oxygen Concentration in Czochralski Silicon Crystals,”Jpn. J. Appl. Phys., vol. 38, Pt. 1, No. 10, pp. 5725-5730, 1999.
Wijaranakula et al.; “Effect of high-temperature annealing on the dissolution of the D-defects in n-type Czochralski silicon,”Appl. Phys. Lett., vol. 64 (8), pp. 1030-1032, Feb. 21, 1994.

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