Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-03-21
1998-06-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 88, 117902, 117954, C30B 2514
Patent
active
057592640
ABSTRACT:
A method for a vapor-phase growth of a GaAs.sub.1-x P.sub.x epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs.sub.1-x P.sub.x epitaxial layer (wherein x stands for an alloy composition satisfying the expression, 0.ltoreq.x.ltoreq.1) to be formed on a plurality of semiconductor single crystal substrates 1 by setting the semiconductor single crystal substrates 1 in place on a wafer holder 16 disposed inside a vapor-phase growth apparatus 30 in an amount of not less than 70% as the covering ratio of the total surface area of the substrates to the surface area of the wafer holder 16.
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Endo Masahisa
Kaise Tsuneyuki
Shinohara Masayuki
Watanabe Masataka
Kunemund Robert
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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