Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2003-05-07
2009-06-30
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S090000, C117S091000, C117S092000, C977S811000, C977S825000, C977S832000
Reexamination Certificate
active
07553369
ABSTRACT:
The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of:forming at least one thin layer (1) on a nanostructured support with specific upper surface (2),and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.
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English Machine Translation and Abstract for JP JP02000091627A.
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Lysenko Volodymyr
Marty Olivier
Dennison, Schultz & MacDonald
Kunemund Robert M
Rao G. Nagesh
Universite Claude Bernard - Lyon 1
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