Method for two-dimensional epitaxial growth of III-V compound se

Details Method for two-dimensional epitaxial growth of III-V compound se Method for two-dimensional epitaxial growth of III-V compound se

1994-12-07

1995-10-10

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117102, H01L 2120

Patent

active

054562066

ABSTRACT:
A method for growing a thin InGaAs or InAlAs layer with heavy lattice mismatching on a GaAs substrate by a MOCVD process is described. A first material gas is injected by a MOCVD process to grow a buffer layer on a GaAs substrate to a prescribed thickness. After stopping the injection of the first material gas for a few seconds, a second material gas containing a column III element is injected at a prescribed temperature. A third material gas containing a column V element is injected to grow, on the buffer layer, a thin metallic layer of a binary compound containing the column III element of a high concentration to a thickness of 2 nm or less. After a prescribed time from the injection of the third material gas, In and Ga gases or In and Al gases, mixed in the prescribed proportion are injected in an atmosphere of said third material gas to grow a thin InGaAs or InAlAs layer on the thin metallic layer.

REFERENCES:
patent: 5270247 (1993-12-01), Sakuma et al.
patent: 5296088 (1994-03-01), Kodama et al.
T. Anan, et al., "Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy," Applied Physics Letters 63 (8), 23 Aug. 1993, pp. 1047-1049.

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