Method of (111) group II-VI epitaxial layer grown on (111) silic

Details Method of (111) group II-VI epitaxial layer grown on (111) silic Method of (111) group II-VI epitaxial layer grown on (111) silic

1993-10-22

1995-03-07

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117104, 117956, H01L 2120

Patent

active

053948262

ABSTRACT:
A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the <110> direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.

REFERENCES:
patent: 4828938 (1989-05-01), Lichtmann et al.
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Halsall et al., "Growth and assessment of CdS and CdSe layers produced on GaAs by metalorganic chemical vapour deposition," Journal of Crystal Growth, vol. 91, No. 1-2, Aug. 1988, Amsterdam, NL, pp. 135-140.
Tompa et al., "Multiwafer growth of CdTe on GaAs by metalorganic chemical vapor deposition in a vertical, high-speed, rotating disk reactor," Applied Physics Letters, vol. 55, No. 1, Jul. 3, 1989, New York, US, pp. 62-64.
Liaw et al., "X-ray double-crystal diffraction studies of CdTe/GaAs heteroepitaxial layers," Journal of Crystal Growth, vol. 100, No. 3, Mar. 1990, Amsterdam, NL, pp. 508-514.
Smith et al., "The growth of CdHgTe on GaAs and fabrication of high-quality photodiodes," Journal of Vacuum Science and Technology: Part A, vol. 8, No. 2, Mar. 1990, New York, US, pp. 1078-1085.
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