Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1993-11-09
1995-01-03
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117201, 117919, 117925, 437107, 437108, C30B 2514
Patent
active
053776160
ABSTRACT:
A method for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber which comprises the steps of heating an organometal compound to a predetermined temperature to obtain vapor of the compound at a predetermined vapor pressure and supplying, in a constant flow rate, the vapor to the surface of a substrate heated under a reduced pressure: an apparatus for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber 11 comprising a first gas flow path for the vapor of the organometal compound which connects a container 20, in which the organometal compound is charged, to a crystal growth chamber heated under a reduced pressure through a first valve 21, a first massflow controller 22 and a second valve 23 in this order; and a constant temperature oven 24 and 25 for controlling the temperature of the container 20 and the first gas flow path extending from the container 20 to the second valve 23, are herein disclosed. The method and the apparatus makes it possible to form a thin film on substrate having even a large surface area and uniform composition and thickness with good reproducibility and to provide an epitaxial thin film of a compound semiconductor having good sharpness of the crystal growing boundary; the method further makes it possible to prevent the contamination of the solid organometal compound and to provide good workability.
REFERENCES:
patent: 4147571 (1979-04-01), Stringfellow et al.
patent: 4193835 (1980-03-01), Inoue et al.
patent: 4517220 (1985-05-01), Rose
patent: 4533410 (1985-08-01), Ogura et al.
"The operation of metalorganic bubblers at reduced pressure."; Hersee, S. D. et al; Journal of Vacuum Science; Mar.-Apr. 1990; vol. 8, No. 2, pp. 800-804.
"Epitaxy from flowing vapors of organometallic compounds and hydrides at Knudsen Number of 0.05-10"; Zhuk, B. V. et al; Soviet Technical Physics Letters; Sep. 1981, vol. 7, No. 9, pp. 485-486.
Hirahara Kazuhiro
Ishihara Toshinobu
Mihira Hiroshi
Shimizu Tetsuo
Takaya Seiki
Breneman R. Bruce
Garrett Felisa
Shin-Etsu Chemical Co. , Ltd.
Stec Inc.
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