LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Product and process for forming a semiconductor structure on...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Production method for semiconductor substrate and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Production method for silicon epitaxial wafer and silicon...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Production method of opto-electronic device array

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Production of bulk single crystals of aluminum nitride, silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Production of bulk single crystals of silicon carbide

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Production of diamond film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Production of elemental thin films using a boron-containing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Production of epitactic GaN layers on substrates

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Production of heavy doped ZnSe crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Production of low defect, crack-free epitaxial films on a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Production process for high purity polycrystal silicon and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Pulsed nucleation deposition of tungsten layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Quart crucible with large diameter for pulling single crystal an

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Quartz thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Rapid low-temperature epitaxial growth using a hot-element...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Recovering purified water and potassium chloride from spent...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Reducing nitrogen content in silicon carbide crystals by...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reduction of carbon inclusions in sublimation grown SiC...