Production of heavy doped ZnSe crystal

Details Production of heavy doped ZnSe crystal Production of heavy doped ZnSe crystal

1997-08-07

1999-04-06

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117108, 117956, C30B 100

Patent

active

058912436

ABSTRACT:
In a process for growing a ZnSe crystal by an MBE or MOCVD process, N.sub.2 gas dissociated by electromagnetic waves and vapor In are prepared at a ratio of N:In being 2:1. The atomic gases may be prepared by decomposing InN at a high temperature with electromagnetic irradiation and adding N.sub.2 gas to the decomposed product. The atomic gases are fed onto a substrate in a crystal growth region, so as to simultaneously dope ZnSe with In and N at a ratio of 1:2. A n-type dopant In substitutionally occupying a position of Zn makes a 1:1 couple with a p-type dopant N substitutionally occupying a position of Se, and another one N atom coordinates near the atomic couple and serves as an acceptor. As a result, the acceptor is kept in activated state up to higher concentration, and the ZnSe crystal can be heavily doped with the p-type dopant N.

REFERENCES:
patent: 4632711 (1986-12-01), Fujita
patent: 5140385 (1992-08-01), Kukimoto
patent: 5248631 (1993-09-01), Park
"Heavily doped p. Znse: N grown by MBE"Appl. Phys. lett 59, 1991 pp. 2992 to 2994. DePuydt, 1991.
"Materials design of the codoping for the fabrication of low resistivity p.type Znse . . . "Phys. Stat. sol (202) p. 763-773 Yoshida, 1997.

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