Production of bulk single crystals of silicon carbide

Details Production of bulk single crystals of silicon carbide Production of bulk single crystals of silicon carbide

1998-10-09

2000-04-04

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 99, 117935, 117951, C30B 2936

Patent

active

060456132

ABSTRACT:
Bulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a crystal growth interface. The silicon source vapor is provided by vaporizing liquid silicon and transporting the silicon vapor to a crystal growth crucible. The carbon vapor species are provided by either a carbon containing source gas (for example, CN) or by flowing the silicon source vapor over or through a solid carbon source, for example flowing the silicon vapor through porous graphite or a bed of graphite particles.

REFERENCES:
patent: Re34861 (1995-02-01), Davis et al.
patent: 5723391 (1998-03-01), Hunter et al.
patent: 5858086 (1999-01-01), Hunter
patent: 5964944 (1999-10-01), Sugiyama et al.
patent: 5985024 (1999-11-01), Balakrishna et al.

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